US PATENT SUBCLASS 257 / 218-- .~.~.~ High resistivity channel (e.g., accumulation mode) or surface channel (e.g., transfer of signal charge occurs at the surface of the semi-conductor) or minority carriers at input (e.g., surface channel input)

US PATENT SUBCLASS 257 / 218
.~.~.~ High resistivity channel (e.g., accumulation mode) or surface channel (e.g., transfer of signal charge occurs at the surface of the semi-conductor) or minority carriers at input (e.g., surface channel input)

Current as of: June, 1999
Click HD for Main Headings
Click for All Classes

Internet Version by PATENTEC © 1999 Terms of Use

257 /	HD	ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213	DF	FIELD EFFECT DEVICE {6}
215	DF	.~ Charge transfer device {11}
216	DF	.~.~ Majority signal carrier (e.g., buried or bulk channel, or peristaltic) {5}
218		.~.~.~ High resistivity channel (e.g., accumulation mode) or surface channel (e.g., transfer of signal charge occurs at the surface of the semi-conductor) or minority carriers at input (e.g., surface channel input)

DEFINITION

Classification: 257/218

High resistivity channel (e.g., accumulation mode) or surface channel (e.g., transfer of signal charge occurs at the surface of the semiconductor) or minority carriers at input (i.e., surface channel input):

(under subclass 216) Subject matter wherein the majority signal carrier charge transfer device has a channel made of relatively high electrical resistivity material, or where the transfer of signal charge takes place at the surface of the semiconductor, or where minority charge carriers are input into a surface channel, but majority carriers are input into the bulk or buried channel portion of the device.