US PATENT SUBCLASS 257 / 224
.~.~.~ Channel confinement

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
215  DF  .~ Charge transfer device {11}
216  DF  .~.~ Majority signal carrier (e.g., buried or bulk channel, or peristaltic) {5}
224.~.~.~ Channel confinement

DEFINITION

Classification: 257/224

Channel confinement:

(under subclass 216) Subject matter wherein the majority carrier charge transfer device has means to restrict the dimensions of the thin semiconductor conductive path region (charge transfer channel) between the source and drain of the device.