US PATENT SUBCLASS 257 / 217
.~.~.~ Having a conductive means in direct contact with channel (e.g., non- insulated gate)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
215  DF  .~ Charge transfer device {11}
216  DF  .~.~ Majority signal carrier (e.g., buried or bulk channel, or peristaltic) {5}
217.~.~.~ Having a conductive means in direct contact with channel (e.g., non- insulated gate)

DEFINITION

Classification: 257/217

Having a conductive means in direct contact with channel (e.g., non-insulated gate):

(under subclass 216) Subject matter wherein an electrical conductor (e.g., electrode) directly contacts the channel region of the charge transfer device (e.g., a non-insulated

gate (control) electrode).

(1) Note. The conductive means in direct contact with the channel may be directly connected to the substrate.

(2) Note. The conductive means in direct contact with the channel may be made of metal, forming a Schottky contact with the semiconductor channel material, i.e., a metal-semiconductor junction.