US PATENT SUBCLASS 257 / 219
.~.~.~ Impurity concentration variation

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
215  DF  .~ Charge transfer device {11}
216  DF  .~.~ Majority signal carrier (e.g., buried or bulk channel, or peristaltic) {5}
219.~.~.~ Impurity concentration variation {2}
220  DF  .~.~.~.~> Vertically within channel (e.g., profiled)
221  DF  .~.~.~.~> Along the length of the channel (e.g., doping variations for transfer directionality)

DEFINITION

Classification: 257/219

Impurity concentration variation:

(under subclass 216) Subject matter wherein the majority signal carrier charge transfer device contains impurity dopant ions which vary in terms of concentration in all or part of the channel of the device.

(1) Note. The impurity dopant ion concentration may vary across the channel and channel substrate interface.