US PATENT SUBCLASS 257 / 220
.~.~.~.~ Vertically within channel (e.g., profiled)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
215  DF  .~ Charge transfer device {11}
216  DF  .~.~ Majority signal carrier (e.g., buried or bulk channel, or peristaltic) {5}
219  DF  .~.~.~ Impurity concentration variation {2}
220.~.~.~.~ Vertically within channel (e.g., profiled)

DEFINITION

Classification: 257/220

Vertically within channel (e.g., profiled):

(under subclass 219) Subject matter wherein the impurity dopant ion concentration in the channel of the device varies across the channel in a direction perpendicular to a main surface of the device, regardless of the orientation of the channel (e.g., parallel or perpendicular to a main surface of the device).