US PATENT SUBCLASS 257 / 221
.~.~.~.~ Along the length of the channel (e.g., doping variations for transfer directionality)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
215  DF  .~ Charge transfer device {11}
216  DF  .~.~ Majority signal carrier (e.g., buried or bulk channel, or peristaltic) {5}
219  DF  .~.~.~ Impurity concentration variation {2}
221.~.~.~.~ Along the length of the channel (e.g., doping variations for transfer directionality)

DEFINITION

Classification: 257/221

Along the length of the channel (e.g., doping variations for transfer directionality):

(under subclass 219) Subject matter wherein the impurity dopant ion concentration in the channel of the device varies along the length of the channel, whether the channel is horizontally or vertically oriented.