| 257 / | HD | ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES) |
|
| 213 | DF | FIELD EFFECT DEVICE {6} |
| 288 |  | .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17} |
| 289 | DF | .~.~> Significant semiconductor chemical compound in bulk crystal (e.g., GaAs) |
| 290 | DF | .~.~> Light responsive or combined with light responsive device {1} |
| 295 | DF | .~.~> With ferroelectric material layer |
| 296 | DF | .~.~> Insulated gate capacitor or insulated gate transistor combined with capacitor (e.g., dynamic memory cell) {10} |
| 314 | DF | .~.~> Variable threshold (e.g., floating gate memory device) {2} |
| 327 | DF | .~.~> Short channel insulated gate field effect transistor {6} |
| 347 | DF | .~.~> Single crystal semiconductor layer on insulating substrate (SOI) {4} |
| 355 | DF | .~.~> With overvoltage protective means {1} |
| 364 | DF | .~.~> With resistive gate electrode |
| 365 | DF | .~.~> With plural, separately connected, gate electrodes in same device {1} |
| 367 | DF | .~.~> Insulated gate controlled breakdown of pn junction (e.g., field plate diode) |
| 368 | DF | .~.~> Insulated gate field effect transistor in integrated circuit {10} |
| 402 | DF | .~.~> With permanent threshold adjustment (e.g., depletion mode) {3} |
| 408 | DF | .~.~> Including lightly doped drain portion adjacent channel (e.g., lightly doped drain, LDD device) |
| 409 | DF | .~.~> With means to increase breakdown voltage (e.g., field shield electrode, guard ring, etc.) |
| 410 | DF | .~.~> Gate insulator includes material (including air or vacuum) other than SiO2 {1} |
| 412 | DF | .~.~> Gate electrode of refractory material (e.g., polysilicon or silicide of a refractory or platinum group metal) {1} |