US PATENT SUBCLASS 257 / 327
.~.~ Short channel insulated gate field effect transistor

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
327.~.~ Short channel insulated gate field effect transistor {6}
328  DF  .~.~.~> Vertical channel or double diffused insulated gate field effect device provided with means to protect against excess voltage (e.g., gate protection diode)
329  DF  .~.~.~> Gate controls vertical charge flow portion of channel (e.g., VMOS device) {1}
335  DF  .~.~.~> Active channel region has a graded dopant concentration decreasing with distance from source region (e.g., double diffused device, DMOS transistor) {6}
344  DF  .~.~.~> With lightly doped portion of drain region adjacent channel (e.g., LDD structure)
345  DF  .~.~.~> With means to prevent sub-surface currents, or with non-uniform channel doping
346  DF  .~.~.~> Gate electrode overlaps the source or drain by no more than depth of source or drain (e.g., self-aligned gate)

DEFINITION

Classification: 257/327

Short channel insulated gate field effect transistor:

(under subclass 288) Subject matter wherein the field effect device is an insulated gate field effect transistor with a short channel (i.e., one wherein the length of the channel is sufficiently short that the threshold voltage of the transistor depends on the length of the channel, or where the channel is specified to be less than 2 micrometers in length).