US PATENT SUBCLASS 257 / 346
.~.~.~ Gate electrode overlaps the source or drain by no more than depth of source or drain (e.g., self-aligned gate)


Current as of: June, 1999
Click HD for Main Headings
Click for All Classes

Internet Version by PATENTEC © 1999      Terms of Use



257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
327  DF  .~.~ Short channel insulated gate field effect transistor {6}
346.~.~.~ Gate electrode overlaps the source or drain by no more than depth of source or drain (e.g., self-aligned gate)


DEFINITION

Classification: 257/346

Gate electrode overlaps the source or drain by no more than depth of source or drain (e.g., self-aligned gate):

(under subclass 327) Subject matter wherein the short channel IGFET has a gate electrode which overlaps the source or drain or both by no more than the thickness of the depth of the source or drain (e.g., a self-aligned gate).

(1) Note. A self-aligned gate is one which is aligned between the source and drain via a masking process which uses the gate material itself to achieve the alignment.

SEE OR SEARCH THIS CLASS, SUBCLASS:

282, 283, 332, 387, and 797, for other self-aligned gate devices.