257 / | HD | ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES) |
213 | DF | FIELD EFFECT DEVICE {6} |
288 | DF | .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17} |
327 | DF | .~.~ Short channel insulated gate field effect transistor {6} |
346 | .~.~.~ Gate electrode overlaps the source or drain by no more than depth of source or drain (e.g., self-aligned gate) |