US PATENT SUBCLASS 257 / 329
.~.~.~ Gate controls vertical charge flow portion of channel (e.g., VMOS device)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
327  DF  .~.~ Short channel insulated gate field effect transistor {6}
329.~.~.~ Gate controls vertical charge flow portion of channel (e.g., VMOS device) {1}
330  DF  .~.~.~.~> Gate electrode in groove {4}

DEFINITION

Classification: 257/329

Gate controls vertical charge flow portion of channel (e.g., VMOS device):

(under subclass 327) Subject matter wherein the short channel

IGFET has a channel portion in which charge flows in a substantially vertical direction and wherein the charge flowing therein is controlled by the gate electrode.

(1) Note. An IGFET's short channel may have horizontal as well as vertical charge flow portions. This subclass provides for those devices in which the vertical charge flow portion, i.e., the portion of the channel in which charge is flowing substantially in a vertical direction, of the channel is controlled by the gate.