| 257 / | HD | ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES) |
|
| 213 | DF | FIELD EFFECT DEVICE {6} |
| 288 | DF | .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17} |
| 327 | DF | .~.~ Short channel insulated gate field effect transistor {6} |
| 329 | DF | .~.~.~ Gate controls vertical charge flow portion of channel (e.g., VMOS device) {1} |
| 330 |  | .~.~.~.~ Gate electrode in groove {4} |
| 331 | DF | .~.~.~.~.~> Plural gate electrodes or grid shaped gate electrode |
| 332 | DF | .~.~.~.~.~> Gate electrode self-aligned with groove |
| 333 | DF | .~.~.~.~.~> With thick insulator to reduce gate capacitance in non-channel areas (e.g., thick oxide over source or drain region) |
| 334 | DF | .~.~.~.~.~> In integrated circuit structure |