US PATENT SUBCLASS 257 / 334
.~.~.~.~.~ In integrated circuit structure

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
327  DF  .~.~ Short channel insulated gate field effect transistor {6}
329  DF  .~.~.~ Gate controls vertical charge flow portion of channel (e.g., VMOS device) {1}
330  DF  .~.~.~.~ Gate electrode in groove {4}
334.~.~.~.~.~ In integrated circuit structure

DEFINITION

Classification: 257/334

In integrated circuit structure:

(under subclass 330) Subject matter wherein the device is located in an integrated circuit structure.