US PATENT SUBCLASS 257 / 331
.~.~.~.~.~ Plural gate electrodes or grid shaped gate electrode

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
327  DF  .~.~ Short channel insulated gate field effect transistor {6}
329  DF  .~.~.~ Gate controls vertical charge flow portion of channel (e.g., VMOS device) {1}
330  DF  .~.~.~.~ Gate electrode in groove {4}
331.~.~.~.~.~ Plural gate electrodes or grid shaped gate electrode

DEFINITION

Classification: 257/331

Plural gate electrodes or grid shaped gate electrode:

(under subclass 330) Subject matter wherein there is more than one gate electrode located in a groove or wherein the gate electrode has a grid or mesh type shape.