US PATENT SUBCLASS 257 / 332
.~.~.~.~.~ Gate electrode self-aligned with groove

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
327  DF  .~.~ Short channel insulated gate field effect transistor {6}
329  DF  .~.~.~ Gate controls vertical charge flow portion of channel (e.g., VMOS device) {1}
330  DF  .~.~.~.~ Gate electrode in groove {4}
332.~.~.~.~.~ Gate electrode self-aligned with groove

DEFINITION

Classification: 257/332

Gate electrode self-aligned with groove:

(under subclass 330) Subject matter wherein the gate electrode is self-aligned with the groove.

SEE OR SEARCH THIS CLASS, SUBCLASS:

282, 283, 346, 387, and 797, for other self-aligned gate devices.