US PATENT SUBCLASS 257 / 335
.~.~.~ Active channel region has a graded dopant concentration decreasing with distance from source region (e.g., double diffused device, DMOS transistor)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
327  DF  .~.~ Short channel insulated gate field effect transistor {6}
335.~.~.~ Active channel region has a graded dopant concentration decreasing with distance from source region (e.g., double diffused device, DMOS transistor) {6}
336  DF  .~.~.~.~> With lightly doped portion of drain region adjacent channel (e.g., LDD structure)
337  DF  .~.~.~.~> In integrated circuit structure {1}
339  DF  .~.~.~.~> With means to increase breakdown voltage
340  DF  .~.~.~.~> With means (other than self-alignment of the gate electrode) to decrease gate capacitance (e.g., shield electrode)
341  DF  .~.~.~.~> Plural sections connected in parallel (e.g., power MOSFET) {1}
343  DF  .~.~.~.~> All contacts on same surface (e.g., lateral structure)

DEFINITION

Classification: 257/335

Active channel region has a graded dopant concentration decreasing with distance from source region (e.g., double diffused device, DMOS transistor):

(under subclass 327) Subject matter wherein the short channel IGFET's active channel region has a graded dopant concentration decreasing with distance from source region, e.g., double diffused device or a DMOS transistor.