US PATENT SUBCLASS 257 / 340
.~.~.~.~ With means (other than self-alignment of the gate electrode) to decrease gate capacitance (e.g., shield electrode)

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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
327  DF  .~.~ Short channel insulated gate field effect transistor {6}
335  DF  .~.~.~ Active channel region has a graded dopant concentration decreasing with distance from source region (e.g., double diffused device, DMOS transistor) {6}
340.~.~.~.~ With means (other than self-alignment of the gate electrode) to decrease gate capacitance (e.g., shield electrode)

DEFINITION

Classification: 257/340

With means (other than self-alignment of the gate electrode) to decrease gate capacitance (e.g., shield electrode):

(under subclass 335) Subject matter wherein the graded channel doping short channel IGFET has means (other than self-alignment of the gate electrode) (e.g., an shielding electrode) to decrease the capacitance of the gate electrode.