US PATENT SUBCLASS 257 / 339
.~.~.~.~ With means to increase breakdown voltage

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
327  DF  .~.~ Short channel insulated gate field effect transistor {6}
335  DF  .~.~.~ Active channel region has a graded dopant concentration decreasing with distance from source region (e.g., double diffused device, DMOS transistor) {6}
339.~.~.~.~ With means to increase breakdown voltage

DEFINITION

Classification: 257/339

With means to increase breakdown voltage:

(under subclass 335) Subject matter wherein the graded channel doping short channel IGFET includes means to increase the voltage that may be applied to the device without electrical breakdown of the device occurring.