US PATENT SUBCLASS 257 / 337
.~.~.~.~ In integrated circuit structure

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
327  DF  .~.~ Short channel insulated gate field effect transistor {6}
335  DF  .~.~.~ Active channel region has a graded dopant concentration decreasing with distance from source region (e.g., double diffused device, DMOS transistor) {6}
337.~.~.~.~ In integrated circuit structure {1}
338  DF  .~.~.~.~.~> With complementary field effect transistor

DEFINITION

Classification: 257/337

In integrated circuit structure:

(under subclass 335) Subject matter wherein the graded channel doping short channel IGFET is contained in a single monolithic chip with other active or passive solid-state electronic devices.