US PATENT SUBCLASS 257 / 338
.~.~.~.~.~ With complementary field effect transistor


Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
327  DF  .~.~ Short channel insulated gate field effect transistor {6}
335  DF  .~.~.~ Active channel region has a graded dopant concentration decreasing with distance from source region (e.g., double diffused device, DMOS transistor) {6}
337  DF  .~.~.~.~ In integrated circuit structure {1}
338.~.~.~.~.~ With complementary field effect transistor


DEFINITION

Classification: 257/338

With complementary field effect transistor:

(under subclass 337) Subject matter wherein the graded channel doping short channel IGFET is contained in a single monolithic chip with a field effect transistor with a polarity type opposite to that of the graded channel doping

short channel IGFET.