257 / | HD | ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES) |
|
213 | DF | FIELD EFFECT DEVICE {6} |
288 | DF | .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17} |
327 | DF | .~.~ Short channel insulated gate field effect transistor {6} |
335 | DF | .~.~.~ Active channel region has a graded dopant concentration decreasing with distance from source region (e.g., double diffused device, DMOS transistor) {6} |
337 | DF | .~.~.~.~ In integrated circuit structure {1} |
338 | | .~.~.~.~.~ With complementary field effect transistor |