US PATENT SUBCLASS 257 / 336
.~.~.~.~ With lightly doped portion of drain region adjacent channel (e.g., LDD structure)

Current as of: June, 1999
Click HD for Main Headings
Click for All Classes

Internet Version by PATENTEC © 1999      Terms of Use


257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
327  DF  .~.~ Short channel insulated gate field effect transistor {6}
335  DF  .~.~.~ Active channel region has a graded dopant concentration decreasing with distance from source region (e.g., double diffused device, DMOS transistor) {6}
336.~.~.~.~ With lightly doped portion of drain region adjacent channel (e.g., LDD structure)

DEFINITION

Classification: 257/336

With lightly doped portion of drain region adjacent channel (e.g., LDD structure):

(under subclass 335) Subject matter wherein the graded channel doping short channel IGFET has a relatively light concentration of dopant in the portion of the drain region which lies adjacent to the current conducting channel.