US PATENT SUBCLASS 257 / 344
.~.~.~ With lightly doped portion of drain region adjacent channel (e.g., LDD structure)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
327  DF  .~.~ Short channel insulated gate field effect transistor {6}
344.~.~.~ With lightly doped portion of drain region adjacent channel (e.g., LDD structure)

DEFINITION

Classification: 257/344

With lightly doped portion of drain region adjacent channel (e.g., LDD structure):

(under subclass 327) Subject matter wherein the short channel IGFET has a lightly doped portion of the drain region adjacent channel (e.g., a lightly doped drain structure).