US PATENT SUBCLASS 257 / 345
.~.~.~ With means to prevent sub-surface currents, or with non-uniform channel doping

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
327  DF  .~.~ Short channel insulated gate field effect transistor {6}
345.~.~.~ With means to prevent sub-surface currents, or with non-uniform channel doping

DEFINITION

Classification: 257/345

With means to prevent sub-surface currents, or with non-uniform channel doping:

(under subclass 327) Subject matter wherein the short channel IGFET contains means to prevent current from flowing below the surface of the device.