US PATENT SUBCLASS 257 / 328
.~.~.~ Vertical channel or double diffused insulated gate field effect device provided with means to protect against excess voltage (e.g., gate protection diode)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
327  DF  .~.~ Short channel insulated gate field effect transistor {6}
328.~.~.~ Vertical channel or double diffused insulated gate field effect device provided with means to protect against excess voltage (e.g., gate protection diode)

DEFINITION

Classification: 257/328

Vertical channel or double diffused insulated gate field effect device provided with means to protect against excess voltage (e.g., gate protection diode):

(under subclass 327) Subject matter wherein the short channel IGFET has a vertical current channel structure or the short channel IGFETs active channel region has a graded dopant concentration decreasing with distance from source region (e.g., double diffused, DMOS transistor) and wherein means are provided to protect the short channel against overvoltages (e.g., a gate insulator protection diode).

(1) Note. Gate protection diodes in IGFETs in general may be found in this class, subclass 355, and indented subclasses.