US PATENT SUBCLASS 257 / 408
.~.~ Including lightly doped drain portion adjacent channel (e.g., lightly doped drain, LDD device)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
408.~.~ Including lightly doped drain portion adjacent channel (e.g., lightly doped drain, LDD device)

DEFINITION

Classification: 257/408

Including lightly doped drain portion adjacent channel (e.g., lightly doped drain, LDD device):

(under subclass 288) Subject matter wherein the device includes a drain portion adjacent the current channel which is lightly doped with impurities.