US PATENT SUBCLASS 257 / 289
.~.~ Significant semiconductor chemical compound in bulk crystal (e.g., GaAs)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
289.~.~ Significant semiconductor chemical compound in bulk crystal (e.g., GaAs)

DEFINITION

Classification: 257/289

Significant semiconductor chemical compound in bulk crystal (e.g., GaAs):

(under subclass 288) Subject matter wherein the insulated electrode field effect device contains a significant semiconductor chemical compound in a bulk (as contrasted with thin film) crystal (e.g., GaAs).

SEE OR SEARCH THIS CLASS, SUBCLASS:

1+, for bulk effect devices.