US PATENT SUBCLASS 257 / 402
.~.~ With permanent threshold adjustment (e.g., depletion mode)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
402.~.~ With permanent threshold adjustment (e.g., depletion mode) {3}
403  DF  .~.~.~> With channel conductivity dopant same type as that of source and drain {1}
405  DF  .~.~.~> With gate insulator containing specified permanent charge {1}
407  DF  .~.~.~> With gate electrode of controlled workfunction material (e.g., low workfunction gate material)

DEFINITION

Classification: 257/402

With permanent threshold adjustment (e.g., depletion mode):

(under subclass 288) Subject matter wherein the device includes means for permanently adjusting the threshold voltage at which the device conducts (e.g., depletion mode IGFETs).