US PATENT SUBCLASS 257 / 403
.~.~.~ With channel conductivity dopant same type as that of source and drain

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
402  DF  .~.~ With permanent threshold adjustment (e.g., depletion mode) {3}
403.~.~.~ With channel conductivity dopant same type as that of source and drain {1}
404  DF  .~.~.~.~> Non-uniform channel doping

DEFINITION

Classification: 257/403

With channel conductivity dopant same type as that of source and drain:

(under subclass 402) Subject matter wherein the device has a channel which is doped with impurity dopant to be the same conductivity type (n or p) as the source and drain.