US PATENT SUBCLASS 257 / 367
.~.~ Insulated gate controlled breakdown of pn junction (e.g., field plate diode)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
367.~.~ Insulated gate controlled breakdown of pn junction (e.g., field plate diode)

DEFINITION

Classification: 257/367

Insulated gate controlled breakdown of pn junction (e.g., field plate diode):

Subject matter under 288 including an electrically insulated gate electrode which is used to control the voltage applied to the device to cause breakdown of the pn junction.