US PATENT SUBCLASS 257 / 410
.~.~ Gate insulator includes material (including air or vacuum) other than SiO2

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
410.~.~ Gate insulator includes material (including air or vacuum) other than SiO2 {1}
411  DF  .~.~.~> Composite or layered gate insulator (e.g., mixture such as silicon oxynitride)

DEFINITION

Classification: 257/410

Gate insulator includes material (including air or vacuum) other than SiO2:

(under subclass 288) Subject matter wherein the gate electrode insulator includes material other than silicon dioxide.