US PATENT SUBCLASS 257 / 411
.~.~.~ Composite or layered gate insulator (e.g., mixture such as silicon oxynitride)

Current as of: June, 1999
Click HD for Main Headings
Click for All Classes

Internet Version by PATENTEC © 1999      Terms of Use


257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
410  DF  .~.~ Gate insulator includes material (including air or vacuum) other than SiO2 {1}
411.~.~.~ Composite or layered gate insulator (e.g., mixture such as silicon oxynitride)

DEFINITION

Classification: 257/411

Composite or layered gate insulator (e.g., mixture such as silicon oxynitride):

(under subclass 410) Subject matter wherein the gate insulator is made of a composite material or layers of different materials.