US PATENT SUBCLASS 257 / 296
.~.~ Insulated gate capacitor or insulated gate transistor combined with capacitor (e.g., dynamic memory cell)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
296.~.~ Insulated gate capacitor or insulated gate transistor combined with capacitor (e.g., dynamic memory cell) {10}
297  DF  .~.~.~> With means for preventing charge leakage due to minority carrier generation (e.g., alpha generated soft error protection or "dark current" leakage protection)
298  DF  .~.~.~> Capacitor for signal storage in combination with non-volatile storage means
299  DF  .~.~.~> Structure configured for voltage converter (e.g., charge pump, substrate bias generator)
300  DF  .~.~.~> Capacitor coupled to, or forms gate of, insulated gate field effect transistor (e.g., nondestructive readout dynamic memory cell structure)
301  DF  .~.~.~> Capacitor in trench {4}
306  DF  .~.~.~> Stacked capacitor {2}
310  DF  .~.~.~> With high dielectric constant insulator (e.g., Ta2Os)
311  DF  .~.~.~> Storage node isolated by dielectric from semiconductor substrate
312  DF  .~.~.~> Voltage variable capacitor (i.e., capacitance varies with applied voltage)
313  DF  .~.~.~> Inversion layer capacitor

DEFINITION

Classification: 257/296

Insulated gate capacitor or insulated gate transistor combined with capacitor (e.g., dynamic memory cell):

(under subclass 288) Subject matter wherein the device gate acts as a capacitor (i.e., wherein a positive potential placed on the gate electrode creates a negative charge on the other side of the insulator in the semiconductor material of the device, and vice versa) or the device is a transistor and it is combined with a capacitor.

SEE OR SEARCH CLASS

438, Semiconductor Device Manufacturing: Process, particularly

239+, for methods of forming an insulated gate field effect transistor combined with a capacitor and subclasses 386 through 399 for manufacture of a capacitors, per se, utilizing a semiconductor substrate.