US PATENT SUBCLASS 257 / 300-- .~.~.~ Capacitor coupled to, or forms gate of, insulated gate field effect transistor (e.g., nondestructive readout dynamic memory cell structure)

US PATENT SUBCLASS 257 / 300
.~.~.~ Capacitor coupled to, or forms gate of, insulated gate field effect transistor (e.g., nondestructive readout dynamic memory cell structure)

Current as of: June, 1999
Click HD for Main Headings
Click for All Classes

Internet Version by PATENTEC © 1999 Terms of Use

257 /	HD	ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213	DF	FIELD EFFECT DEVICE {6}
288	DF	.~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
296	DF	.~.~ Insulated gate capacitor or insulated gate transistor combined with capacitor (e.g., dynamic memory cell) {10}
300		.~.~.~ Capacitor coupled to, or forms gate of, insulated gate field effect transistor (e.g., nondestructive readout dynamic memory cell structure)

DEFINITION

Classification: 257/300

Capacitor coupled to, or forms gate of, insulated gate field effect transistor (e.g., non-destructive readout dynamic memory cell structure):

(under subclass 296) Subject matter wherein the capacitor is electrically connected to or forms the gate of an insulated gate field effect transistor (IGFET), e.g., a non-destructive readout dynamic memory cell structure in which the charge state of the capacitor may be read out or determined by the conduction state of the field effect transistor, without discharging the capacitor in the readout process.