US PATENT SUBCLASS 257 / 311
.~.~.~ Storage node isolated by dielectric from semiconductor substrate

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
296  DF  .~.~ Insulated gate capacitor or insulated gate transistor combined with capacitor (e.g., dynamic memory cell) {10}
311.~.~.~ Storage node isolated by dielectric from semiconductor substrate

DEFINITION

Classification: 257/311

Storage Node isolated by dielectric from semiconductor substrate:

(under subclass 296) Subject matter wherein the device has an electrode upon which the charge varies as an indication of the memory state of the device (e.g., memory cell) which electrode is electrically isolated by a dielectric material from the semiconductor substrate of the device.