US PATENT SUBCLASS 257 / 299
.~.~.~ Structure configured for voltage converter (e.g., charge pump, substrate bias generator)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
296  DF  .~.~ Insulated gate capacitor or insulated gate transistor combined with capacitor (e.g., dynamic memory cell) {10}
299.~.~.~ Structure configured for voltage converter (e.g., charge pump, substrate bias generator)

DEFINITION

Classification: 257/299

Structure configured for voltage converter (e.g., charge pump, substrate bias generator):

(under subclass 296) Subject matter including structure for use as a voltage converter (e.g., a device for changing AC to DC or vice versa, or for producing a negative DC voltage relative to a reference potential from a positive DC voltage relative to that reference potential).