| 257 / | HD | ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES) |
|
| 213 | DF | FIELD EFFECT DEVICE {6} |
| 288 | DF | .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17} |
| 296 | DF | .~.~ Insulated gate capacitor or insulated gate transistor combined with capacitor (e.g., dynamic memory cell) {10} |
| 301 |  | .~.~.~ Capacitor in trench {4} |
| 302 | DF | .~.~.~.~> Vertical transistor |
| 303 | DF | .~.~.~.~> Stacked capacitor |
| 304 | DF | .~.~.~.~> Storage node isolated by dielectric from semiconductor substrate |
| 305 | DF | .~.~.~.~> With means to insulate adjacent storage nodes (e.g., channel stops or field oxide) |