US PATENT SUBCLASS 257 / 303
.~.~.~.~ Stacked capacitor

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
296  DF  .~.~ Insulated gate capacitor or insulated gate transistor combined with capacitor (e.g., dynamic memory cell) {10}
301  DF  .~.~.~ Capacitor in trench {4}
303.~.~.~.~ Stacked capacitor

DEFINITION

Classification: 257/303

Stacked capacitor:

(under subclass 301) Subject matter wherein the trench capacitor device contains a number of capacitor electrode regions stacked vertically above each other or wherein the capacitor and the transistor are located such that one overlies the other.