US PATENT SUBCLASS 257 / 310
.~.~.~ With high dielectric constant insulator (e.g., Ta2Os)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
296  DF  .~.~ Insulated gate capacitor or insulated gate transistor combined with capacitor (e.g., dynamic memory cell) {10}
310.~.~.~ With high dielectric constant insulator (e.g., Ta2Os)

DEFINITION

Classification: 257/310

With high dielectric constant insulator (e.g., Ta2O5):

(under subclass 296) Subject matter wherein the capacitor device includes an insulating element which has a dielectric constant (e.g., Ta2O5[end subscrpt]) greater than 7.5, the dielectric constant of Si3N4.