US PATENT SUBCLASS 257 / 297
.~.~.~ With means for preventing charge leakage due to minority carrier generation (e.g., alpha generated soft error protection or "dark current" leakage protection)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
296  DF  .~.~ Insulated gate capacitor or insulated gate transistor combined with capacitor (e.g., dynamic memory cell) {10}
297.~.~.~ With means for preventing charge leakage due to minority carrier generation (e.g., alpha generated soft error protection or "dark current" leakage protection)

DEFINITION

Classification: 257/297

With means for preventing charge leakage due to minority carrier generation (e.g., alpha generated soft error protection or "dark current" leakage protection):

(under subclass 296) Subject matter wherein the device further includes means (1) to prevent electrical charge in the capacitor or capacitive type insulated gate region of the transistor to leak therefrom, or (2) to prevent excess leakage currents across pn junctions due to generation of minority carriers in the device for example (a) alpha particles incident on the device or (b) thermal generation of electron-hole pairs, or (c) minority carriers injected into the semiconductor substrate by other devices in the same substrate.

(1) Note. Junctions across which excess leakage is sought to be prevented typically include (a) the source or drain junction of an insulated gate field effect transistor or (b) a connecting BIT line of a memory array which is isolated by a pn junction from a semiconductor substrate.