US PATENT SUBCLASS 257 / 306
.~.~.~ Stacked capacitor

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
296  DF  .~.~ Insulated gate capacitor or insulated gate transistor combined with capacitor (e.g., dynamic memory cell) {10}
306.~.~.~ Stacked capacitor {2}
307  DF  .~.~.~.~> Parallel interleaved capacitor electrode pairs (e.g., interdigitized) {1}
309  DF  .~.~.~.~> With increased effective electrode surface area (e.g., tortuous path, corrugated, or textured electrodes)

DEFINITION

Classification: 257/306

Stacked capacitor:

(under subclass 296) Subject matter wherein the capacitor device contains a number of capacitor electrode regions overlying each other or where the capacitor and the transistor are located such that one overlies the other.