US PATENT SUBCLASS 257 / 307
.~.~.~.~ Parallel interleaved capacitor electrode pairs (e.g., interdigitized)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
296  DF  .~.~ Insulated gate capacitor or insulated gate transistor combined with capacitor (e.g., dynamic memory cell) {10}
306  DF  .~.~.~ Stacked capacitor {2}
307.~.~.~.~ Parallel interleaved capacitor electrode pairs (e.g., interdigitized) {1}
308  DF  .~.~.~.~.~> With capacitor electrodes connection portion located centrally thereof (e.g., fin electrodes with central post)

DEFINITION

Classification: 257/307

Parallel interleaved capacitor electrode pairs (e.g., interdigitized):

(under subclass 306) Subject matter wherein the number of overlying capacitor electrodes is more than one and the overlapping region of each capacitor electrode pair is made up of electrodes from one capacitor interleaved with the electrodes of another capacitor.