US PATENT SUBCLASS 257 / 308
.~.~.~.~.~ With capacitor electrodes connection portion located centrally thereof (e.g., fin electrodes with central post)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
296  DF  .~.~ Insulated gate capacitor or insulated gate transistor combined with capacitor (e.g., dynamic memory cell) {10}
306  DF  .~.~.~ Stacked capacitor {2}
307  DF  .~.~.~.~ Parallel interleaved capacitor electrode pairs (e.g., interdigitized) {1}
308.~.~.~.~.~ With capacitor electrodes connection portion located centrally thereof (e.g., fin electrodes with central post)

DEFINITION

Classification: 257/308

With capacitor electrodes connection portion located

centrally thereof (e.g., fin electrodes with central post):

(under subclass 307) Subject matter wherein the capacitor electrodes are connected together at a centrally located portion thereof, e.g., by a center post.