US PATENT SUBCLASS 257 / 314
.~.~ Variable threshold (e.g., floating gate memory device)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
314.~.~ Variable threshold (e.g., floating gate memory device) {2}
315  DF  .~.~.~> With floating gate electrode {2}
324  DF  .~.~.~> Multiple insulator layers (e.g., MNOS structure) {2}

DEFINITION

Classification: 257/314

Variable threshold (e.g., floating gate memory device):

(under subclass 288) Subject matter wherein the device has a threshold voltage for current conduction which may be varied (e.g., by storage of charge in an insulator layer adjacent the channel in response to an electrical "write" signal).

SEE OR SEARCH THIS CLASS, SUBCLASS:

239, for a floating gate signal charge detection type charge transfer device.

261, for a floating gate JFET.

SEE OR SEARCH CLASS

365, Static Information Storage and Retrieval, appropriate subclass for read/write static storage systems, and

185.01+, for predominate structure of floating gate memory storage (e.g., flash memory), particularly subclass 185.24 for threshold setting (e.g., conditioning).