US PATENT SUBCLASS 257 / 315
.~.~.~ With floating gate electrode

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
314  DF  .~.~ Variable threshold (e.g., floating gate memory device) {2}
315.~.~.~ With floating gate electrode {2}
316  DF  .~.~.~.~> With additional contacted control electrode {5}
323  DF  .~.~.~.~> With means to facilitate light erasure

DEFINITION

Classification: 257/315

With floating gate electrode:

(under subclass 314) Subject matter including a gate electrode which is free of direct electrical connection.

SEE OR SEARCH CLASS

365, Static Information Storage and Retrieval, appropriate subclass for read/write static storage systems, and

185.01+, for predominate structure of floating gate memory storage (e.g., flash memory), particularly subclass 185.24 for threshold setting (e.g., conditioning).