| 257 / | HD | ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES) |
|
| 213 | DF | FIELD EFFECT DEVICE {6} |
| 288 | DF | .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17} |
| 314 | DF | .~.~ Variable threshold (e.g., floating gate memory device) {2} |
| 315 | DF | .~.~.~ With floating gate electrode {2} |
| 316 |  | .~.~.~.~ With additional contacted control electrode {5} |
| 317 | DF | .~.~.~.~.~> With irregularities on electrode to facilitate charging or discharging of floating electrode |
| 318 | DF | .~.~.~.~.~> Additional control electrode is doped region in semiconductor substrate |
| 319 | DF | .~.~.~.~.~> Plural additional contacted control electrodes {1} |
| 321 | DF | .~.~.~.~.~> With thin insulator region for charging or discharging floating electrode by quantum mechanical tunneling |
| 322 | DF | .~.~.~.~.~> With charging or discharging by control voltage applied to source or drain region (e.g., by avalanche breakdown of drain junction) |