US PATENT SUBCLASS 257 / 321
.~.~.~.~.~ With thin insulator region for charging or discharging floating electrode by quantum mechanical tunneling

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
314  DF  .~.~ Variable threshold (e.g., floating gate memory device) {2}
315  DF  .~.~.~ With floating gate electrode {2}
316  DF  .~.~.~.~ With additional contacted control electrode {5}
321.~.~.~.~.~ With thin insulator region for charging or discharging floating electrode by quantum mechanical tunneling

DEFINITION

Classification: 257/321

With thin insulator region for charging or discharging floating electrode by quantum mechanical tunneling:

(under subclass 316) Subject matter including a thin insulator region for charging of discharging a floating electrode by means of quantum mechanical tunneling of charge carriers.

SEE OR SEARCH THIS CLASS, SUBCLASS:

9, through 25, 28, and 30 through 39, for active solid-state devices involving this discrete layer type of quantum mechanical tunneling.