US PATENT SUBCLASS 257 / 317
.~.~.~.~.~ With irregularities on electrode to facilitate charging or discharging of floating electrode

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
314  DF  .~.~ Variable threshold (e.g., floating gate memory device) {2}
315  DF  .~.~.~ With floating gate electrode {2}
316  DF  .~.~.~.~ With additional contacted control electrode {5}
317.~.~.~.~.~ With irregularities on electrode to facilitate charging or discharging of floating electrode

DEFINITION

Classification: 257/317

With irregularities on electrode to facilitate charging or discharging of floating electrode:

(under subclass 316) Subject matter wherein the floating or additional control (gate) electrode has physical surface irregularities to facilitate charging or discharging of the floating gate electrode.