US PATENT SUBCLASS 257 / 318
.~.~.~.~.~ Additional control electrode is doped region in semiconductor substrate

Current as of: June, 1999
Click HD for Main Headings
Click for All Classes

Internet Version by PATENTEC © 1999      Terms of Use


257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
314  DF  .~.~ Variable threshold (e.g., floating gate memory device) {2}
315  DF  .~.~.~ With floating gate electrode {2}
316  DF  .~.~.~.~ With additional contacted control electrode {5}
318.~.~.~.~.~ Additional control electrode is doped region in semiconductor substrate

DEFINITION

Classification: 257/318

Additional control electrode is doped region in semiconductor substrate:

(under subclass 316) Subject matter wherein the additional control (gate) electrode is a specific region in the semiconductor substrate which is doped with impurity ions.