US PATENT SUBCLASS 257 / 295
.~.~ With ferroelectric material layer

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
295.~.~ With ferroelectric material layer

DEFINITION

Classification: 257/295

With ferroelectric material layer:

(under subclass 288) Subject matter including a layer of material which exhibits a spontaneous dipole moment.