| 257 / | HD | ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES) |
|
| 213 | DF | FIELD EFFECT DEVICE {6} |
| 288 | DF | .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17} |
| 368 |  | .~.~ Insulated gate field effect transistor in integrated circuit {10} |
| 369 | DF | .~.~.~> Complementary insulated gate field effect transistors {5} |
| 378 | DF | .~.~.~> Combined with bipolar transistor |
| 379 | DF | .~.~.~> Combined with passive components (e.g., resistors) {2} |
| 382 | DF | .~.~.~> With contact to source or drain region of refractory material (e.g., polysilicon, tungsten, or silicide) {3} |
| 386 | DF | .~.~.~> With means to reduce parasitic capacitance {2} |
| 390 | DF | .~.~.~> Matrix or array of field effect transistors (e.g., array of FETs only some of which are completed, or structure for mask programmed read-only memory (ROM)) {1} |
| 392 | DF | .~.~.~> Insulated gate field effect transistors of different threshold voltages in same integrated circuit (e.g., enhancement and depletion mode) |
| 393 | DF | .~.~.~> Insulated gate field effect transistor adapted to function as load element for switching insulated gate field effect transistor |
| 394 | DF | .~.~.~> With means to prevent parasitic conduction channels {2} |
| 401 | DF | .~.~.~> With specified physical layout (e.g., ring gate, source/drain regions shared between plural FETs, plural sections connected in parallel to form power MOSFET) |