US PATENT SUBCLASS 257 / 392
.~.~.~ Insulated gate field effect transistors of different threshold voltages in same integrated circuit (e.g., enhancement and depletion mode)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
368  DF  .~.~ Insulated gate field effect transistor in integrated circuit {10}
392.~.~.~ Insulated gate field effect transistors of different threshold voltages in same integrated circuit (e.g., enhancement and depletion mode)

DEFINITION

Classification: 257/392

Insulated gate field effect transistors of different threshold voltages in same integrated circuit (e.g., enhancement and depletion mode):

(under subclass 368) Subject matter wherein the IGFETs have different threshold voltages in the same integrated circuit (e.g., both enhancement and depletion mode IGFETs in the same integrated circuit).